Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
HER 201 |
HER 202 |
HER 203 |
HER 204 |
HER 205 |
HER 206 |
HER 207 |
HER 208 |
Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 210 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified current |
IF(AV) | 2.0 | A | |||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
60 |
A |
|||||||
@IF=2.0A Maximum forward voltage |
VF | 1.0 | 1.3 | 1.7 | V | |||||
@VDC TA = 25ºC Maximum reverse current |
IR | 5 | μA | |||||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 50 | 75 | ns | ||||||
Typical thermal resistance (Note 1) | RθJA | 60 | ºC/W | |||||||
Operating junction temperature range |
TJ | -55 --- +150 | ºC | |||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC |