Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
MBR 1040 |
MBR 1045 |
MBR 1050 |
MBR 1060 |
MBR 1080 |
MBR 10100 |
MBR 10150 |
MBR 10200 |
Unit |
Maximum repetitive peak reverse voltage |
VRRM | 40 | 45 | 50 | 60 | 80 | 100 | 150 | 200 | V |
Maximum RMS voltage | VRMS | 28 | 31.5 | 35 | 42 | 56 | 70 | 105 | 140 | V |
Maximum DC blocking voltage |
VDC | 40 | 45 | 50 | 60 | 80 | 100 | 150 | 200 | V |
Maximum average forward rectified current |
IF(AV) | 10.0 | A | |||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave |
IFSM |
125 |
A |
|||||||
@IF=10.0A Maximum forward voltage |
VF | 0.70 | 0.80 | 0.85 | 0.95 | 0.99 | V | |||
@VDC TA= 25ºC Maximum reverse current |
IR | 100 | 50 | uA | ||||||
Typical thermal resistance (Note 1) | RθJC | 2 | ºC/W | |||||||
Operating junction and storage temperature rang |
Tj, TSTG | -55 --- +150 | ºC |