Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
SS10100 | Unit | |
Maximum repetitive peak reverse voltage |
VRRM | 100 | V | |
Maximum RMS voltage | VRMS | 70 | V | |
Maximum DC blocking voltage |
VDC | 100 | V | |
Maximum average forward rectified current |
IF(AV) | 0.0 | A | |
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
125 |
A |
|
@IF=5.0A Maximum forward voltage |
VF | 0.85 | V | |
@VDC Maximum reverse current |
TA= 25ºC | IR | 30 | μA |
Typical thermal resistance (Note 1) | RθJA | 60 | ºC/W | |
Operating junction temperature range |
TJ | -55 --- +150 | ºC | |
Storage temperature range |
TSTG | -55 --- +150 | ºC |