Customization: | Available |
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Manufacturing Technology: | Discrete Device |
Material: | Element Semiconductor |
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Symbols | MURF 1005CT | MURF 1010CT | MURF 1015CT | MURF 1020CT | MURF 1030CT | MURF 1040CT | MURF 1060CT | Units | |
Maximum repetitive peak reverse voltage | VRMM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | Volts |
Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | Volts |
Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | Volts |
Maximum Average Forward Rectified Current @TA=55 ºC |
I(AV) | 10.0 | Amps | ||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
150.0 |
Amps |
||||||
Maximum forward voltage at 5.0A DC | VF | 0.95 | 1.30 | Volts | |||||
Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC | IR | 10 400 |
A | ||||||
Maximum Reverse Recovery Time(Note 1) | Trr | 35.0 | 50.0 | ns | |||||
Typical junction capacitance (Note 2) | CJ | 80.0 | 50.0 | pF | |||||
Operating Temperature Range | TJ | -65 to +150 | ºC | ||||||
Storage Temperature Range | TSTG | -65 to +150 | ºC |