Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | 1N 5400 | 1N 5401 | 1N 5402 | 1N 5403 | 1N 5404 | 1N 5405 | 1N 5406 | 1N 5407 | 1N 5408 | UNITS | ||
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | V | |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 210 | 280 | 350 | 420 | 560 | 700 | V | |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | V | |
Maximum average forward rectified current 0.375 "(9.5mm) lead length at TA=75 C |
I(AV) | 3.0 | A | |||||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM | 150 | A |
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Maximum instantaneous forward voltage at 3.0A | VF | 1.1 | V | |||||||||
Maximum DC reverse current at rated DC blocking voltage | TA=25 C TA=100 C |
IR | 5.0 100 |
µA | ||||||||
Typical junction capacitance (NOTE 1) | CJ | 30.0 | pF | |||||||||
Typical thermal resistance (NOTE 2) | RθJA | 20.0 | C/W | |||||||||
Operating junction and storage temperature range | TJ,TSTG | -55 to +150 | C |