Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS |
UMB2F | UMB4F | UMB6F | UMB8F | UMB10F | UNITS | |
Maximum repetitive peak reverse voltage | VRRM | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 200 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified current On glass-epoxy P.C.B.(Note1) On aluminum substrate(Note2) |
IF(AV) |
0.5 0.8 |
A |
||||
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load |
IFSM |
30 |
A |
||||
Maximum instantaneous forward voltage drop per leg at 0.4A |
VF | 1.0 | 1.4 | 1.7 |
V | ||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR | 5.0 500 |
uA uA | ||||
Typical thermal resistance(NOTE 3) |
R JL R JA |
30 88 |
/W |
||||
Maximum reverse recovery time (NOTE 4) | trr | 50 | 75 | ns | |||
Operating temperature range | TJ | -55 to +150 | |||||
storage temperature range | TSTG | -55 to +150 |