Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols | IR1200 F |
R1500 F |
R1800 F |
R2000 F |
R25O0 F |
R3000 F |
R400 0 |
R500 0 |
Units | |
Maximum repetitive peak reverse voltage | Vrmm | 1200 | 1500 | 1800 | 2000 | 2500 | 3000 | 4000 | 5000 | Volts |
Maximum RMS voltage | Vrms | B40 | 1050 | 1260 | 1400 | 1750 | 2100 | 2800 | 3500 | Volts |
Maximum DC blocking voltage | Vdc | 1200 | 1500 | 1800 | 2000 | 2500 | 3000 | 4000 | 5000 | Volts |
Maximum Average Forward Rectified Current, 0.375" (9.5mm) Lead length at TA = 50,t |
'(AV) | 0.5 | 0.2 | Amps | ||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Sup er Imposed on Rated Load(JEDEC Method) |
ksw | 30.0 | Amps | |||||||
Maximum Instantaneous Forward Volts Voltage Drop at 0.5A / 0.2A | % | 2.5 | 6.0 | 5.0 | 6.5 | Volts | ||||
Maximum Full Load Reverse Current, full cycle average 0.375" (9.5mm) lead length at TL = 55 | |R(AV) | 10D.0 | A | |||||||
Maximum DC reverse current at rated DC blocking voltage TA=25t |
Ir | 5.0 | ||||||||
Maximum Reverse Recovery Time(Notei) | Tnr | 500.0 | ns | |||||||
Operating and Storage Temperature Range |
TjTstg | -65 to +150 |