| Customization: | Available |
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| Encapsulation Structure: | Plastic Sealed Transistor |
| Application: | Electronic Products |
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Symbols |
1N 4001 |
1N 4002 |
1N 4003 |
1N 4004 |
1N 4005 |
1N 4006 |
1N 4007 |
Units |
|
| Maximum repetitive peak reverse voltage | VRMM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | Volts |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
| Maximum Average Forward Rectified Current @TA=75 ºC | I(AV) | 1.0 | Amps | ||||||
| Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
30.0 |
Amps |
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| Maximum forward voltage at 1.0A | VF | 1.1 | Volts | ||||||
| Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC | IR | 5.0 50.0 |
μA |
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| Typical junction capacitance (Note 1) | CJ | 15.0 | pF | ||||||
| Typical thermal resistance (Note 2) | RθJA | 26.0 | ºC/W | ||||||
| Operating Temperature Range | TJ | -55 to +125 | ºC | ||||||
| Storage Temperature Range | TSTG | -55 to +125 | ºC | ||||||
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