Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
E1A | E1B | E1C | E1D | E1E | E1G | E1J | Unit | |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V | |
Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | V | |
Maximum DC blocking voltage |
VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V | |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | |||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
|||||||
Typical thermal resistance (Note 1) | RθJA | 180 | ºC/W | |||||||
Operating junction temperature |
TJ | 150 | ºC | |||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC | |||||||
@IF= 1.0A Maximum forward voltage |
VF | 0.95 | 1.25 | 1.70 | V | |||||
@VDC Maximum reverse current |
TA= 25ºC TA= 125ºC |
IR | 5 | μA | ||||||
100 | ||||||||||
IF=0.5A , IR= 1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 35 | ns |