Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | KBU 8A |
KBU 8B |
KBU 8D |
KBU 8G |
KBU 8J |
KBU 8K |
KBU 8M |
UNITS | ||
Maximum repetitive peak reverse voltage | RRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VOLTS | |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | VOLTS | |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VOLTS | |
Maximum average forward output rectified current at | TA=100C(Note 2) TA=45C(Note 2) | I(AV) | 8.0 | Amps | ||||||
6.0 | ||||||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM | 300.0 | Amps | |||||||
Rating for Fusing(t<8.3ms) | I2t | 373 | A2s | |||||||
Maximum instantaneous forward voltage drop per birdge element at 8.0A | VF | 1.0 | Volts | |||||||
Maximum DC reverse current at rated DC blocking voltage | TA=25C TA=100C |
IR | 10 | A | ||||||
1.0 | mA | |||||||||
Typical Junction Capacitance (Note 1) | J | 200 | pF | |||||||
Typical Thermal Resistance (Note 2) | RθJA | 5.0 | C/W | |||||||
Operating junction temperature range | TJ | -65 to +150 | C | |||||||
storage temperature range | TSTG | -65 +150 | C |