Recovery Diodes Semiconductor Devices Emb8s Fast High Frequency Rectifier for Welding Equipment

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: EMB2S-EMB8S
• Certification: RoHS, CE, ISO, CCC
• Luminous Intensity: Standard
• Structure: Alloy
• Material: Silicon
• Raw Material: Copper
• Transport Package: by Sea, Packaging
• Specification: MBS
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.
     

	SYMBOLS	EMB2S	EMB4S	EMB6S		EMB8S		UNITS
Maximum repetitive peak reverse voltage	VRRM	100	200	400		600		V
Maximum RMS voltage	VRMS	70	140	280		420		V
Maximum DC blocking voltage	VDC	100	200	400		600		V
Maximum average forward rectified current  On glass-epoxy P.C.B.(Note1) On aluminum substrate(Note2)	IF(AV)	0.8 1.0						A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load	IFSM	30						A
Maximum instantaneous forward voltage drop per leg at 0.4A	VF	0.95			1.25		1.7	V
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125	IR	5.0 500						uA uA
Typical thermal resistance(NOTE 3)	R JL R JA	28 85						/W
Maximum reverse recovery time (NOTE 4)	trr	35						ns
Operating temperature range	TJ	-55 to +150
storage temperature range	TSTG	-55 to +150