New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65

• Certification: RoHS, CE, ISO, CCC, SGS
• Shape: GT
• Shielding Type: Remote Cut-Off Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: Mosfet
• Cooling Method: Naturally Cooled Tube
• Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Structure: IGBT
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: by Sea, Packing
• Specification: T0-247, T0-3P, T0-220, T0-220F, T0-263
• Trademark: ZG
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 500000
• Package Size: 36.00cm * 36.00cm * 30.00cm
• Package Gross Weight: 12.500kg

Product Description

Parameter	Symbol		Value	Unit
- Drain-Source Voltage	VDSS		650	V
Continues Drain Current	ID	Tc=25ºC	7*	A
		Tc=100ºC	4.0*
( 1) Plused Drain Current (note 1)	IDM		25	A
Gate-to-Source Voltage	VGS		±30	V
( 2) Single Pulsed Avalanche Energy (note 2)	EAS		400	mJ
( 1) Avalanche Current (note 1)	IAR		7.0	A
( 1) Repetitive Avalanche Energy (note 1)	EAR		14.5	mJ
( 3) Peak Diode Recovery (note 3)	dv/dt		4.5	V/ns
Power Dissipation	PD Tc=25ºC	TO-220/TO-262	147	W
		TO-220F	48
Power Dissipation Derating Factor	PD(DF) Above 25ºC	TO-220/TO-262	1.18	W/ºC
		TO-220F	0.38
Operating and Storage Temperature Range	TJ,TSTG		150,-55~+150	ºC
Maximum Temperature for Soldering	TL		300	ºC

ZG7N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

Parameter	Symbol		Max	Unit
Thermal Resistance,Junction to Case	Rth(j-c)	TO-220/TO-262	0.85	W
		TO-220F	2.6
Thermal Resistance,Junction to Ambient	Rth(j-A)	TO-220/TO-262	62.5	W/ºC
		TO-220F	62.5

Off-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
- Drain-Source Breakdown Voltage	BVDSS	ID=250μA, VGS=0V	650	-	-	V
Breakdown Voltage Temperature Coefficient	△BVDSS/△TJ	ID=250μA, referenced to 25ºC	-	0.7	-	V/ºC
Zero Gate Voltage Drain Current	IDSS	VDS=650V,VGS=0V, TC=25ºC	-	-	1	μA
		VDS=520V, TC=125ºC	-	-	10
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS = -30V	-	-	-100	nA

On-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250μA	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=3.5A	-	1.2	1.5	Ω
Forward Transconductance	gfs	VDS = 40V, ID=3.5A(note4)	-	6.5	-	S

Dynamic Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	960	1890	pF
Output capacitance	Coss		-	95	178	pF
Reverse transfer capacitance	Crss		-	13	20	pF