Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
10A05 | 10A1 | 10A2 | 10A3 | 10A4 | 10A5 | 10A6 | 10A8 | 10A10 | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 210 | 280 | 350 | 420 | 560 | 700 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | V |
Maximum average forward rectified current |
IF(AV) | 10.0 | A | ||||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
400 |
A |
||||||||
@IF= 10.0 A Maximum forward voltage |
VF | 1.0 | V | ||||||||
@VDC TA= 25ºC Maximum reverse current |
IR | 10 | μA | ||||||||
Typical thermal resistance (Note 1) | RθJA | 20 | ºC/W | ||||||||
Operating junction and storage temperature rang |
Tj, TSTG | -55 --- +150 | ºC |