Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols |
MUR120 | MUR130 | MUR140 | MUR160 | Unit | ||
Parameter | |||||||
@IF=1.0A Maximum forward voltage |
VF | 0.875 | 1.25 | V | |||
@VDC Maximum reverse current |
IR | 5 | μA | ||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 25 | 50 | ns |
Parameter |
Symbols |
MUR120 | MUR130 | MUR140 | MUR160 | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 200 | 300 | 400 | 600 | V |
Maximum RMS voltage | VRMS | 140 | 210 | 280 | 420 | V |
Maximum DC blocking voltage |
VDC | 200 | 300 | 400 | 600 | V |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | |||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
35 |
A |
|||
Typical thermal resistance (Note 1) | RθJA | 65 | ºC/W | |||
Operating junction temperature range |
TJ | -55 --- +150 | ºC | |||
Storage temperature range |
TSTG | -55 --- +150 | ºC |