Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
RS3A F |
RS3B F |
RS3D F |
RS3G F |
RS3J F |
RS3K F |
RS3M F |
Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified current |
IF(AV) | 3.0 | A | ||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM | 100 |
A |
||||||
Typical thermal resistance(Note 1) | RθJA | 90 | ºC/W | ||||||
Operating junction temperature |
TJ | 150 | ºC | ||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC | ||||||
@IF=3.0A Maximum forward voltage |
VF | 1.3 | V | ||||||
@VDC TA= 25ºC Maximum reverse current |
IR | 5 | μA | ||||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 150 | 250 | 500 | ns |