Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
||
Value | Unit | ||
Repetitive Peak Reverse Voltage |
VRRM | 250 | V |
Reverse Voltage |
VRM | 200 | V |
Maximum Average Forward Current |
IF(AV) | 200 | mA |
() t=1uS Non-repetitive Peak Forward Surge Current at 1uS |
IFSM | 4.0 | A |
IF=100mA Forward Voltage |
VFM | 1.0 | V |
VR=200V Reverse Current |
IRM | 0.1 | uA |
(Note 1) Junction Capacitance |
CJ | 5.0 | pF |
(Note 2) Reverse Recovery Time |
TRR | 50 | nS |
Power Dissipation |
PD | 200 | mW |
Type Thermal Resistance |
RθJA | 620 | ºC/W |
Operating Junction and Storage Temperature Range |
TJ ,TSTG | -55 --- +150 | ºC |