1h1-1h8 50-1000V High Efficiency Rectifier Diode

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: 1H1-1H8
• Certification: RoHS, CE, ISO, CCC, SGS
• Luminous Intensity: Standard
• Color: Black
• Material: Silicon
• Transport Package: by Sea
• Specification: R-1
• Trademark: ZG
• Origin: Anhui, Province, China
• HS Code: 85411000

Product Description

ABOUT US




FAQ:
1, Are you Manufacturer or trading company?
We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with prompt service, we guarantee that we will reply to our customers within 1-12H once we receive the inquiry, we will do the utmost to help to cut down your cost. 
AND ZG WILL LIKE TO ASSURE ALL THE CUSTOMERS THAT WHATEVER IS WRITTEN ON THE LABEL OF THE PRODUCT IS 100% TRUE

2. May I have some samples for testing? 
Yes, OF COURSE. We offer free samples for our customers and they only need to pay the freight for samples. If you have order with us, we will deduct the freight from your first order. 

3. What about the delivery ? 
Usually the lead time is about 1-3 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time. 

4. What about the payment terms ?
Order amount is less than $10000: 80% Advance,and 20% before shipment.
Order amount is between $10000 and $20000: 50% Advance and 50% before shipment.
Order amount is more than $20000: 30% Advance and 70% before shipment.

5. What about the shipment terms ? 
FOB Shanghai by sea;       


Contact us:
Changzhou Zhongguang Electronic Co., Ltd
Add: No.6 Hehong Road,Wujin Economic Development Zone, Jiangsu, China.
 
 
 
We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to you to choose the freight forwarder and if you need, we could assist you. 


 

Parameter	Symbols	1H1	1H2	1H3	1H4	1H5	1H6	1H7	1H8	Unit
Maximum repetitive peak reverse voltage	VRRM	50	100	200	300	400	600	800	1000	V
Maximum RMS voltage	VRMS	35	70	140	210	280	420	560	700	V
Maximum DC blocking voltage	VDC	50	100	200	300	400	600	800	1000	V
Maximum average forward rectified current	IF(AV)	1.0								A
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave	IFSM	30								A
Typical thermal resistance  (Note 1)	RθJA	113								ºC/W
Operating junction temperature	TJ	150								ºC
Storage temperature range	TSTG	-55 --- +150								ºC