Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
SB 140 |
SB 160 |
SB 1100 |
Unit | |
Maximum repetitive peak reverse voltage |
VRRM | 40 | 60 | 100 | V | |
Maximum RMS voltage | VRMS | 28 | 42 | 70 | V | |
Maximum DC blocking voltage |
VDC | 40 | 60 | 100 | V | |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | |||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
|||
@IF=1.0A Maximum forward voltage |
VF | 0.50 | 0.70 | 0.85 | V | |
@VDC Maximum reverse current |
TA= 25ºC | IR | 30 | 30 | 30 | μA |
Typical thermal resistance (Note 1) | RθJA | 60 | ºC/W | |||
Operating junction temperature range |
TJ | -55 --- +125 | -55 --- +150 | ºC | ||
Storage temperature range |
TSTG | -55 --- +150 | ºC |