Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | EABS2 | EABS4 | EABS6 | EABS8 | UNITS | ||||
Maximum repetitive peak reverse voltage | VRRM | 100 | 200 | 400 | 600 | V | |||
Maximum RMS voltage | VRMS | 70 | 140 | 280 | 420 | V | |||
Maximum DC blocking voltage | VDC | 100 | 200 | 400 | 600 | V | |||
Maximum average forward rectified current On glass-epoxy P.C.B.(Note1) On aluminum substrate(Note2) | IF(AV) | 0.8 1.0 | A |
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Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load |
IFSM | 30 | A |
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Maximum instantaneous forward voltage drop per leg at 0.4A | VF | 0.95 | 1.25 | 1.7 | V | ||||
Maximum DC reverse current at rated DC blocking voltage | TA=25 TA=125 | IR | 5.0 500 | uA uA | |||||
Typical thermal resistance(NOTE 3) | R JL R JA |
25 75 |
/W |
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Maximum reverse recovery time (NOTE 4) | trr | 35 | ns | ||||||
Operating temperature range | TJ | -55 to +150 | |||||||
storage temperature range | TSTG | -55 to +150 |