Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) | |||||||||
PARAMETER | SYMBOL | P600A | P600B | P600D | P600G | P600J | P600K | P600M | UNIT |
Max. repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Max. RMS voltage | V RMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Max. DC blocking voltage | V DC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
TA = 60 °C, 0.375" (9.5 mm) forward rectified lead length (fig. 2) |
IF(AV) |
6.0 | A |
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22 | |||||||||
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load | IFSM | 400 | A | ||||||
Operating junction and storage temperature range | TJ, TSTG | - 50 to + 150 | °C |
PRIMARY CHARACTERISTICS | |
IF(AV) | 6.0 A |
VRRM | 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V |
IFSM | 400 A |
VF | 0.9 V, 1.0 V |
IR | 5.0 μA |
TJ max. | 150 °C |
Package | P600 |
Diode variations | Single die |
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) | |||||||||||
PARAMETER | TEST CONDITIONS | SYMBOL | P600A | P600B | P600D | P600G | P600J | P600K | P600M | UNIT | |
Max. instantaneous forward voltage | 6.0 A | VF | 0.90 | 1.0 | V | ||||||
100 A | 1.30 | 1.4 | |||||||||
Max. DC reverse current at rated DC blocking voltage | TA = 25 °C | IR | 5.0 | μA | |||||||
TA =100 °C | 1.0 | mA | |||||||||
Typical reverse recovery time | IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A | trr | 2.5 | μs | |||||||
Typical junction capacitance | 4.0 V, 1 MHz | CJ | 150 | pF |