Gbj10005 to Gbj1010 Bridge Rectifier Diode

Product Details
Customization: Available
Encapsulation Structure: Plastic Sealed Transistor
Application: Electronic Products
Manufacturer/Factory, Trading Company
Gold Member Since 2017

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Registered Capital
10000000 RMB
Plant Area
>2000 square meters
  • Gbj10005 to Gbj1010 Bridge Rectifier Diode
  • Gbj10005 to Gbj1010 Bridge Rectifier Diode
  • Gbj10005 to Gbj1010 Bridge Rectifier Diode
  • Gbj10005 to Gbj1010 Bridge Rectifier Diode
  • Gbj10005 to Gbj1010 Bridge Rectifier Diode
  • Gbj10005 to Gbj1010 Bridge Rectifier Diode
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Basic Info.

Model NO.
GBJ10005-GBJ1010
Certification
RoHS, CE, ISO, CCC, SGS
Luminous Intensity
Standard
Color
Black
Structure
Planar
Material
Silicon
Raw Material
Coopper
Transport Package
by Sea, Packaging
Specification
GBJ6
Trademark
ZG Brand
Origin
Auhui Province, China
HS Code
8541100000
Production Capacity
50000000000000000000000000

Product Description

The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast recovery diode(SF) and schottky diode(SkY). The main package includes SOD-123FL, SMA, SMB, SMC, DO-41, DO-15, DO-17, DO-27, and R-6 etc.
What about the delivery ?
Usually the lead time is about 1-5 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time.
What about the payment terms ?
 30% Advance and 70% before shipment.
 What about the shipment terms ?
FOB Shanghai by sea;
We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to you to choose the freight forwarder and if you need, we could assist you.
Contact us:
Changzhou Zhongguang Electronic Co., Ltd
Add: No.6 Hehong Road,Wujin Economic Development Zone, Jiangsu, China.
 
 
Website: zg-diode.en.made-in-china.com
  SYMBOLS GBU4005 GBU401 GBU402 GBU404 GBU406 GBU408 GBU410 UNITS
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 VOLTS
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 VOLTS
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 VOLTS
Maximum Average   Forward   (with heatsink Note 2) Rectified  Current  @ TC=100ºC  (without heatsink) I(AV) 4.0
2.4
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM 125 Amps
Maximum instantaneous forward voltage at 2.0A VF 0.95 Volts
Maximum instantaneous forward voltage at 4.0A VF 1.05 Volts
Maximum DC reverse current at   rated DC blocking voltage per leg TA=25 C
TA=125 C
IR 5.0 μA
      500  
Typical Thermal Resistance (Note 2) RθJC 2.2  C/W
Typical Junction Capacitance Per Element (Note1) CJ 45 pF
I2t Rating for Fusing (t<8.3ms) I2t 64.8 A2s
Operating temperature range TJ -55 to +150  C
storage temperature range TSTG -55 to +150  C
Gbj10005 to Gbj1010 Bridge Rectifier DiodeGbj10005 to Gbj1010 Bridge Rectifier DiodeGbj10005 to Gbj1010 Bridge Rectifier DiodeGbj10005 to Gbj1010 Bridge Rectifier DiodeGbj10005 to Gbj1010 Bridge Rectifier DiodeGbj10005 to Gbj1010 Bridge Rectifier DiodeGbj10005 to Gbj1010 Bridge Rectifier Diode

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