Gbj10005 to Gbj1010 Bridge Rectifier Diode

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: GBJ10005-GBJ1010
• Luminous Intensity: Standard
• Color: Black
• Structure: Planar
• Material: Silicon
• Raw Material: Coopper
• Transport Package: by Sea, Packaging
• Specification: GBJ6
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast recovery diode(SF) and schottky diode(SkY). The main package includes SOD-123FL, SMA, SMB, SMC, DO-41, DO-15, DO-17, DO-27, and R-6 etc.
What about the delivery ?
Usually the lead time is about 1-5 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time.
What about the payment terms ?
 30% Advance and 70% before shipment.
 What about the shipment terms ?
FOB Shanghai by sea;
We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to you to choose the freight forwarder and if you need, we could assist you.
Contact us:
Changzhou Zhongguang Electronic Co., Ltd
Add: No.6 Hehong Road,Wujin Economic Development Zone, Jiangsu, China.
 
 
Website: zg-diode.en.made-in-china.com

		SYMBOLS	GBU4005	GBU401	GBU402	GBU404	GBU406	GBU408	GBU410	UNITS
Maximum repetitive peak reverse voltage		VRRM	50	100	200	400	600	800	1000	VOLTS
Maximum RMS voltage		VRMS	35	70	140	280	420	560	700	VOLTS
Maximum DC blocking voltage		VDC	50	100	200	400	600	800	1000	VOLTS
Maximum Average   Forward   (with heatsink Note 2) Rectified  Current  @ TC=100ºC  (without heatsink)		I(AV)	4.0 2.4							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)		IFSM	125							Amps
Maximum instantaneous forward voltage at 2.0A		VF	0.95							Volts
Maximum instantaneous forward voltage at 4.0A		VF	1.05							Volts
Maximum DC reverse current at   rated DC blocking voltage per leg	TA=25 C TA=125 C	IR	5.0							μA
			500
Typical Thermal Resistance (Note 2)		RθJC	2.2							C/W
Typical Junction Capacitance Per Element (Note1)		CJ	45							pF
I2t Rating for Fusing (t<8.3ms)		I2t	64.8							A2s
Operating temperature range		TJ	-55 to +150							C
storage temperature range		TSTG	-55 to +150							C