0.8A 1000V Rectifier Fast Recovery Diode Rabs2-Rabs10 High-Frequency High-Voltage Silicon Stack

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: RABS2-RABS10
• Certification: RoHS, CE, ISO, CCC
• Luminous Intensity: Standard
• Structure: Alloy
• Material: Silicon
• Raw Material: Copper
• Transport Package: by Sea, Packaging
• Specification: ABS
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.
     
 

Parameter		RABS2	RABS4	RABS6	RABS8	RABS10
	Symbols						Unit
	VRRM	200	400	600	800	1000	V
Maximum repetitive peak reverse voltage
Maximum RMS voltage	VRMS	140	280	420	560	700	V
	VDC	200	400	600	800	1000	V
Maximum DC blocking voltage
	IF(AV)	0.8					A
Maximum average forward rectified current
8.3 ms	IFSM	30					A
Non-repetitive peak forward surge current
8.3 ms singlehalf sine-wave
@IF=0.4A	VF	1.3					V
Maximum forward voltage
@VDC TA= 25ºC Maximum reverse current	IR	10					μA
Typical thermal resistance (Note 1)	RθJA	80					ºC/W
	RθJL	25
Operating junction and storage temperature rang	Tj, TSTG	-55 --- +150					ºC
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time		150		250	500