B0530W Surface Mount Schottky Diode

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: B0530W
• Certification: RoHS, CE, ISO, CCC, SGS
• Luminous Intensity: Standard
• Color: Black
• Structure: Planar
• Material: Silicon
• Raw Material: Cooper
• Transport Package: by Sea, Packaging
• Specification: DO-123
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast recovery diode(SF) and schottky diode(SkY). The main package includes SOD-123FL, SMA, SMB, SMC, DO-41, DO-15, DO-17, DO-27, and R-6 etc.

What about the delivery ?
Usually the lead time is about 1-5 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time.
What about the payment terms ?
 30% Advance and 70% before shipment.
 What about the shipment terms ?
FOB Shanghai by sea;
We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to you to choose the freight forwarder and if you need, we could assist you.
Contact us:
Changzhou Zhongguang Electronic Co., Ltd
Add: No.6 Hehong Road,Wujin Economic Development Zone, Jiangsu, China.
 
 
Website: zg-diode.en.made-in-china.com

	SYMBOLS	BA157	BA158	BA159		UNITS
Maximum repetitive peak reverse voltage	VRRM	400	600	1000		V
Maximum RMS voltage	VRMS	280	420	700		V
Maximum DC blocking voltage	VDC	400	600	1000		V
Maximum average forward rectified current 0.375"(9.5mm) lead length at TA=75 C	I(AV)	1.0				A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	30.0				A
Maximum instantaneous forward voltage at 1.0A	VF	1.3				V
Maximum DC reverse current at rated DC blocking voltage	IR	5.0   100.0				μA
Maximum reverse recovery time      (NOTE 1)	trr	150	250		300	ns
Typical junction capacitance (NOTE 2)	CJ	15.0				pF
Typical thermal resistance (NOTE 3)	RθJA	50.0				o C/W
Operating junction and storage temperature range	TJ,TSTG	-55 to +150				o C