Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols | FR101 | FR102 | FR10 | 3 FR104 | FR105 | FR106 | FR107 | Units | |
Maximum repetitive peak reverse voltage | VRMM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum Average Forward Rectified Current @TA=75 ºC | I(AV) | 1.0 | Amps | ||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
30.0 |
Amps |
||||||
Maximum forward voltage at 1.0A DC | VF | 1.3 | Volts | ||||||
Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC | IR | 5.0 100 |
μA | ||||||
Maximum Reverse Recovery Time (Note 1) | Trr | 150.0 | 250.0 | 500.0 | ns | ||||
Typical junction capacitance (Note 2) | CJ | 25.0 | 15.0 | pF | |||||
Typical thermal resistance (Note 3) | RθJA | 25.0 | ºC/W | ||||||
Operating Temperature Range | TJ | -55 to +125 | ºC | ||||||
Storage Temperature Range | TSTG | -55 to +150 | ºC |
Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.