Gbj20005 to Gbj2010 Bridge Rectifier Diode

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: GBJ20005-GBJ2010
• Certification: RoHS, CE, ISO, CCC, SGS
• Luminous Intensity: Standard
• Color: Black
• Structure: Planar
• Material: Silicon
• Transport Package: by Sea, Packaging
• Specification: GBJ6
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast recovery diode(SF) and schottky diode(SkY). The main package includes SOD-123FL, SMA, SMB, SMC, DO-41, DO-15, DO-17, DO-27, and R-6 etc.
What about the delivery ?
Usually the lead time is about 1-5 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time.
What about the payment terms ?
 30% Advance and 70% before shipment.
 What about the shipment terms ?
FOB Shanghai by sea;
We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to you to choose the freight forwarder and if you need, we could assist you.
Contact us:
Changzhou Zhongguang Electronic Co., Ltd
Add: No.6 Hehong Road,Wujin Economic Development Zone, Jiangsu, China.
 
 
Website: zg-diode.en.made-in-china.com

CHARACTERISTICS	SYMBOL	2GBJ 005	2GBJ 01	2GBJ 02	2GBJ 04	2GBJ 06	2GBJ 08	2GBJ 10	UNIT
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Bridge Input Voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Maximum Average Forward Rectified Output Current @ T A=50ºC	I(AV)	2.0							A
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load	IFSM	60							A
Maximum  Forward Voltage Drop Per Bridge Element at 2.0A Peak	VF	1.1							V
Maximum Reverse Current at Rated DC Blocking Voltage Per Element	IR	5.0							μA
Maximum Reverse Current at Rated DC Blocking Voltage Per Element @ TJ=100ºC	IR	1.0							mA
Operating Temperature Range	TJ	-55 to +150							ºC
Storage Temperature Range	TSTG	-55 to +150							ºC