New Original GBP410 4A/1000V Bridge Stack Silicon Bridge Rectifier Electronic Components

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: GBP401-GBP410
• Certification: RoHS, CE, ISO, CCC
• Luminous Intensity: Standard
• Structure: Alloy
• Material: Silicon
• Raw Material: Copper
• Transport Package: by Sea, Packaging
• Specification: GBP
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.

 

CHARACTERISTICS		SYMBOL	GBP4005	GBP401	GBP402	GBP404	GBP406	GBP408	GBP410	UNIT
Maximum Recurrent Peak Reverse Voltage		VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Voltage		VRMS	30	70	140	280	420	560	700	V
Maximum DC Blocking Voltage		VDC	50	100	200	400	600	800	1000	V
Maximum Average   Forward  Rectified  Current @ TC=100ºC (with heatsink )		I(AV)	4.0							A
Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method)		IFSM	125							A
Maximum  Forward Voltage at 2.0A DC		VF	0.95							V
Maximum  DC Reverse Current at Rated DC Blocking Voltage	@ TA=25 ºC @ TA=125ºC	IR	5.0 500							uA
I2t Rating for Fusing (t<8.3ms)		I2t	64.8							A2s
Typical Junction Capacitance Per Element (Note1)		CJ	45							pF
Typical Thermal Resistance (Note2)		RθJC	4.2							C/W
Operating Temperature Range		TJ	-55 to +150							C
Storage Temperature Range		TSTG	- 55 to +150							C