Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols | MB2S | MB4S | MB6S | MB8S | MB10S | Units | |
Maximum repetitive peak reverse voltage | VRMM | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS voltage | V RMS | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC blocking voltage | VDC | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum average forward rectified current at TA=30C On glass-epoxy P.C.B. On aluminum substrate(Note 1,2) |
IF(AV) |
0.5 0.8 |
Amps | ||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
35.0 |
Amps |
||||
Maximum forward voltage at 0.4A | VF | 1.0 | Volts | ||||
Maximum DC reverse current TA =25C at rated DC blocking voltage TA =100C | IR | 5.0 | |||||
Typical junction capacitance per leg (Note 3) | CJ | 15.0 | pF | ||||
Typical thermal resistance per leg | RθJA | 75.0 | C/W | ||||
Operating Temperature Range | TJ | -55 to +150 | C | ||||
Storage Temperature Range | TSTG | -55 to +150 | C |