Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | SF11 | SF12 | SF13 | SF14 | SF15 | SF16 | SF18 | UNITS | ||
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | VOLTS | |
Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | VOLTS | |
Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | VOLTS | |
Maximum average forward rectified current 0.375 "(9.5mm) lead length at TA=55 C | I(AV) | 1.0 | Amps | |||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM | 30.0 | Amps |
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Maximum instantaneous forward voltage at 1.0A | VF | 0.95 | 1.25 | 1.7 | Volts | |||||
Maximum DC reverse current at rated DC blocking voltage | TA=25 C TA=100 C | IR | 5.0 100.0 | μA | ||||||
Maximum reverse recovery time (NOTE 1) | trr | 35 | ns | |||||||
Typical junction capacitance (NOTE 2) | CJ | 15.0 | 10.0 | pF | ||||||
Typical thermal resistance (NOTE 3) | RθJA | 60.0 | o C/W | |||||||
Operating junction and storage temperature range | TJ,TSTG | -65 to +150 | o C |