China Zg Murf1015CT Super Fast Recovery Silicon Rectifier

• Customization: Available
• Encapsulation Structure: Do-201ad / D0-27
• Application: Electronic Products
• Model NO.: MURF1015CT
• Luminous Intensity: Standard
• Color: Black
• Structure: Planar
• Material: Silicon
• Transport Package: by Sea. Packaging
• Specification: DO-201AD / D0-27
• Trademark: ZG
• Origin: Anhui, Province, China
• HS Code: 8541100000

Product Description

 

Product Description

	Symbols	6A05	6A1	6A2	6A4	6A6	6A8	6A10	Units
Maximum repetitive peak reverse	VRMM	50	100	200	400	600	800	1000	Volts
	VRMS	35	70	140	280	420	560	700	Volts
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	Volts
Maximum Average Forward Rectified Current @TA=60ºC	I(AV)	6.0							Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC	IFSM	300.0							Amps
Maximum forward voltage at 6.0A DC	VF	0.95							Volts
Maximum DC reverse current TA=25ºC at rated DC blocking voltage TA=100ºC	IR	10.0 1.0							A
Maximum Full Load Reverse Current, full cycle average 0.375"(9.5mm)lead length at TL=105ºC	IR(AV)	1.0							A
Typical junction capacitance (Note 1)	CJ	150.0							pF
Typical thermal resistance (Note 2)	RθJA	10.0							ºC/W
Operating Temperature Range	TJ	-55 to +150							ºC
Storage Temperature Range	TSTG	-55 to +150							ºC

 

Detailed Photos

	Symbols	1N 5400	1N 5401	1N 5402	1N 5403	1N 5404	1N 5405	1N 5406	1N 5407	1N 5408	Units
Maximum repetitive peak reverse voltage	VRMM	50	100	200	300	400	500	600	800	1000	Volts
Maximum RMS voltage	VRMS	35	70	140	210	280	350	420	560	700	Volts
Maximum DC blocking voltage	VDC	50	100	200	300	400	500	600	800	1000	Volts
Maximum Average Forward Rectified Current @TA=55 ºC	I(AV)	3.0									Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC	IFSM	200.0									Amps
Method) Maximum forward voltage at 3.0A DC	VF	1.0									Volts
Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC	IR	5.0 50									μA
Typical junction capacitance (Note 1)	CJ	50.0						35.0			pF
Typical thermal resistance (Note 2)	RθJA	15.0									ºC/W
Operating Temperature Range	TJ	-55 to +150									ºC
Storage Temperature Range	TSTG	-55 to +150									ºC

Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.




FAQ:

1, Are you Manufacturer or trading company?
We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with prompt service, we guarantee that we will reply to our customers within 1-12H once we receive the inquiry, we will do the utmost to help to cut down your cost. 
AND ZG WILL LIKE TO ASSURE ALL THE CUSTOMERS THAT WHATEVER IS WRITTEN ON THE LABEL OF THE PRODUCT IS 100% TRUE

2. May I have some samples for testing? 
Yes, OF COURSE. We offer free samples for our customers and they only need to pay the freight for samples. If you have order with us, we will deduct the freight from your first order. 

3. What about the delivery ? 
Usually the lead time is about 1-3 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time. 

4. What about the payment terms ?
Order amount is less than $10000: 80% Advance,and 20% before shipment.
Order amount is between $10000 and $20000: 50% Advance and 50% before shipment.
Order amount is more than $20000: 30% Advance and 70% before shipment.

5. What about the shipment terms ? 
FOB Shanghai by sea;