Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols |
M1F | M2F | M3F | M4F | M5F | M6F | M7F | Unit | ||
Parameter | ||||||||||
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | |||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
50 |
A |
|||||||
Typical thermal resistance (Note 1) | RθJA | 90 | ºC/W | |||||||
Operating junction and storage temperature rang |
Tj , TSTG | -55 --- +150 | ºC | |||||||
@IF=2.0A Maximum forward voltage |
VF | 1.1 | V | |||||||
@VDC TA= 25ºC Maximum reverse current |
IR | 5 | μA |