Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
US3A | US3B | US3D | US3B | US3B | US3K | US3M | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified current |
IF(AV) | 3.0 | A | ||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
100 |
A |
||||||
Typical thermal resistance (Note ) | RθJA | 105 | ºC/W | ||||||
Junction temperature |
Tj | 150 | ºC | ||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC | ||||||
@IF=3.0A Maximum forward voltage |
VF | 1.00 | 1.30 | 1.70 | V | ||||
@VDC TA=25ºC Maximum reverse current |
IR | 5 | μA | ||||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 50 | 75 | ns |