Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
1H1 | 1H2 | 1H3 | 1H4 | 1H5 | 1H6 | 1H7 | 1H8 | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 210 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 300 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | |||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
|||||||
Typical thermal resistance (Note 1) | RθJA | 113 | ºC/W | |||||||
Operating junction temperature |
TJ | 150 | ºC | |||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC |