Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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CHARACTERISTICS | SYMBOL | 2GBJ 005 |
2GBJ 01 |
2GBJ 02 |
2GBJ 04 |
2GBJ 06 |
2GBJ 08 |
2GBJ 10 |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS Bridge Input Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Rectified Output Current @ T A=50ºC |
I(AV) | 2.0 | A | ||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load |
IFSM |
60 |
A |
||||||
Maximum Forward Voltage Drop Per Bridge Element at 2.0A Peak |
VF | 1.1 | V | ||||||
Maximum Reverse Current at Rated DC Blocking Voltage Per Element |
IR | 5.0 | μA | ||||||
Maximum Reverse Current at Rated DC Blocking Voltage Per Element @ TJ=100ºC |
IR |
1.0 | mA | ||||||
Operating Temperature Range | TJ | -55 to +150 | ºC | ||||||
Storage Temperature Range | TSTG | -55 to +150 | ºC |