Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
ES5A | ES5B | ES5C | ES5D | ES5E | ES5G | ES5J | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V |
Maximum average forward rectified current |
IF(AV) | 5.0 | A | ||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
100 |
A |
||||||
@IF=5.0A Maximum forward voltage |
VF | 0.95 | 1.30 | 1.70 | V | ||||
@VDC TA= 25ºC Maximum reverse current |
IR | 10 | μA | ||||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 35 | ns | ||||||
Typical thermal resistance (Note 1) | RθJA | 92 | ºC/W | ||||||
Operating junction and storage temperature rang |
Tj, TSTG | -55 --- +150 | ºC |