Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
U1A | U1B | U1D | U1G | U1J | U1K | U1M | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | ||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
||||||
Typical thermal resistance (Note 1) | RθJA | 180 | ºC/W | ||||||
Operating junction temperature |
TJ | 150 | ºC | ||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC | ||||||
@IF= 1.0A Maximum forward voltage |
VF | 1.0 | 1.3 | 1.7 | V | ||||
@VDC TA= 25ºC Maximum reverse current |
IR | 5 | μA | ||||||
IF=0.5A , IR= 1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 50 | 75 | ns |