Customization: | Available |
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Encapsulation Structure: | Chip Transistor |
Application: | Electronic Products |
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Symbols | 1A1 | 1A2 | 1A3 | 1A4 | 1A5 | 1A6 | 1A7 | Units | |
Maximum repetitive peak reverse voltage | VRMM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum Average Forward Rectified Current @TA=75 ºC | I(AV) |
1.0 |
Amps |
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Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
25.0 |
Amps |
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Maximum forward voltage at 1.0A DC | VF | 1.1 | Volts | ||||||
Maximum DC reverse current TA=25ºC at rated DC blocking voltage TA=100ºC | IR |
5.0 50.0 |
μA |
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Typical junction capacitance (Note 1) | CJ | 10.0 | pF | ||||||
Typical thermal resistance (Note 2) | RθJA | 26.0 | ºC/W |
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Operating Temperature Range | TJ | -55 to +125 | ºC |
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Storage Temperature Range |
TSTG | -55 to +150 |
ºC |