Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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CHARACTERISTICS | SYMBOL | GBU 15Q05 |
GBU 1501 |
GBU 1502 |
GBU 1504 |
GBU 1506 |
GBU 15DB |
GBU 1510 |
UNIT |
Maxiinum Recurrent Peak Reverse Voltage | Vrrm | 50 | 100 | 200 | 400 | 60D | 800 | 1002 | V |
Maxiinum RMS Vdtage | Vrms | 35 | 70 | 14D | 28D | 42D | 56D | 70D | V |
Maxiinum DC Blocking Voltage | Vdc | 50 | 100 | 200 | 400 | 60D | 800 | 1002 | V |
Maximum Average Forward (with heatsink Note 2) Rectified Cunrent @ Tc=10D C ('AAthout heatsink) | 15.0 32 |
A | |||||||
Peak Forward Surge Current 8.3nis Single Half Sine-Ware Super Imposed on Rated Load (JEDEC Method) |
hFSM | 240 | A | ||||||
Maximum Forward Voltage at 7.5A DC | Vf | 1.1 | V | ||||||
Maximum DC Reverse Current @ Tj=25 C at Rated DC Blocking Vdtage @ Tj=1 25jC | Ir | •0.2 50D |
A | ||||||
l2t Rating for Fusing (t<8.3nB) | ft | 200 | |||||||
Typical Junction Cspacitance Per Element (No(e1) | c.. | 70 | pF | ||||||
Typical Hiermai Resistance | Rejc | 2.2 | I/W | ||||||
Operating Tefnperature Range | Tj | -55 to+150 | |||||||
Storage Temperature Range | Tstg | -55to+15D |