Zg 5n60 Mosfet 600V 2.8A To220f 5n60

• Certification: RoHS, CE, ISO, CCC, SGS
• Shape: GT
• Shielding Type: Remote Cut-Off Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: Mosfet
• Cooling Method: Naturally Cooled Tube
• Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Structure: IGBT
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: by Sea, Packing
• Specification: T0-247, T0-3P, T0-220, T0-220F, T0-263
• Trademark: ZG
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 500000
• Package Size: 36.00cm * 36.00cm * 30.00cm
• Package Gross Weight: 12.500kg

Product Description

ZG5N60 is an N-channel enhancement mode MOSFET, which is produced usingZhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.



MAIN CHARACTERISTICS     
 

VDSS	600	V
ID	4.0	A
RDS(ON)	2.0	Ω
Crss	8	pF

   ABSOLUTE MAXIMUM RATINGS (Tc=25ºC)                    

 

Parameter	Symbol		Value	Unit
- Drain-Source Voltage	VDSS		600	V
Continues Drain Current	ID	Tc=25ºC	4*	A
		Tc=100ºC	2.5*
( 1) Plused Drain Current (note 1)	IDM		16	A
Gate-to-Source Voltage	VGS		±30	V
( 2) Single Pulsed Avalanche Energy (note 2)	EAS		218	mJ
( 1) Avalanche Current (note 1)	IAR		4.0	A
( 1) Repetitive Avalanche Energy (note 1)	EAR		10	mJ
( 3) Peak Diode Recovery (note 3)	dv/dt		4.5	V/ns
Power Dissipation	PD Tc=25ºC	TO-251/TO-252	51	W
		TO-220/TO-262	100
		TO-220F	33
Power Dissipation Derating Factor	PD(DF) Above 25ºC	TO-251/TO-252	0.39	W/ºC
		TO-220/TO-262	0.8
		TO-220F	0.26
Operating and Storage Temperature Range	TJ,TSTG		150,-55~+150	ºC
Maximum Temperature for Soldering	TL		300	ºC

  THERMAL CHARACTERIASTIC                                                       
 

Parameter	Symbol		Max	Unit
Thermal Resistance,Junction to Case	Rth(j-c)	TO-251/TO-252	2.5	W
		TO-220/TO-262	1.25
		TO-220F	3.79
Thermal Resistance,Junction to Ambient	Rth(j-A)	TO-251/TO-252	83	W/ºC
		TO-220/TO-262	62.5
		TO-220F	62.5

*
* Drain current limited by maximum junction temperature


   ELECTRICAL CHARACTERISTICS                                                     
 

Off-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
- Drain-Source Breakdown Voltage	BVDSS	ID=250μA, VGS=0V	600	-	-	V
Breakdown Voltage Temperature Coefficient	△BVDSS/△TJ	ID=250μA, referenced to 25ºC	-	0.7	-	V/ºC
Zero Gate Voltage Drain Current	IDSS	VDS=600V,VGS=0V, TC=25ºC	-	-	1	μA
		VDS=480V, TC=125ºC	-	-	10
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS = -30V	-	-	-100	nA

 

On-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250μA	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A	-	2.0	2.5	Ω
Forward Transconductance	gfs	VDS = 40V, ID=2.0A (note4)	-	4.0	-	S

 

Dynamic Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	510	660	pF
Output capacitance	Coss		-	54	70	pF
Reverse transfer capacitance	Crss		-	8	10	pF

 

Switching Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Turn-On delay time	td(on)	VDD=300V, ID=4A, RG=25Ω (note 4,5)	-	16	42	ns
Turn-On rise time	tr		-	48	112	ns
Turn-Off delay time	td(off)		-	48	105	ns
Turn-Off Fall time	tf		-	38	86	ns
Total Gate Charge	Qg	VDS =480V , ID=4A, VGS =10V (note 4,5)	-	15	20	nC
-Gate-Source charge	Qgs		-	2.8	-	nC
-Gate-Drain charge	Qgd		-	6.8	-	nC

 

-     Drain-Source Diode Characteristics and Maximum Ratings
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Maximum Continuous Drain-Source Diode Forward Current	IS		-	-	4	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM		-	-	16	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=4A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=4A dIF/dt=100A/μs (note 4)	-	320	-	ns
Reverse recovery charge	Qrr		-	2.4	-	μC

 

Notes:
1:Pulse width limited by maximum junction temperature
2:L=25mH, I_AS=4A, V_DD=50V, R_G=25Ω, Starting T_J=25ºC
3:I_SD ≤4A, di/dt ≤300A/μs, V_DD≤BV_DSS, Starting T_J=25ºC
4:Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
5:Essentially independent of operating temperature

 

   ELECTRICAL CHARACTERISTICS (curves)                              
    
1.                                    2.
Fig. 1 On-State Characteristics                                                          Fig. 2 Transfer Characteristics

             3.                        4.
Fig. 3 Breakdown Voltage Variation vs Temperature         Fig. 4 On-Resistance Variation vs Temperature
 
                      5.                                                         6.
Fig. 5 Capacitance Characteristics                                       Fig. 6 Gate Charge Characteristics

         
7.                                   8.
Fig. 7 Maximum Safe Operating Area         Fig. 8 Maximum Drain Current vs Case Temperature

9.  (TO-251/TO-252)
Fig. 9 Transient Thermal Response Curve (TO-251/TO-252)

      10.  (TO-220/TO-262)
Fig. 10 Transient Thermal Response Curve(TO-220/TO-262)

11.  (TO-220F)
Fig. 11 Transient Thermal Response Curve(TO-220F)

   TEST CIRCUITS AND WAVEFORMS                                         

12.  
Fig.12 Resistive Switching Test Circuit & Waveforms


13.  
Fig.13 Gate Charge Test Circuit & Waveform


14.  
Fig.14 Unclamped Inductive Switching Test Circuit & Waveforms


  TPACKAGE MECHANICAL DATA                                             
TO-251

DIM	MILLIMETERS	DIM	MILLIMETERS
A	2.2±0.5	H	1.8±0.5
B	5.2±0.25	I	0.8±0.05
C	5.3±0.25	J	0.508±0.015
D	4.5±0.5	K	2.3±0.25
E	6.3±0.25	L	0.5±0.1
F	2.3±0.05	M	0.508±0.015
G	0.6±0.05	N	7.5±0.5

TO-252

DIM	MILLIMETERS	DIM	MILLIMETERS
A	2.2±0.5	I	0.8±0.05
B	5.2±0.25	J	0.508±0.015
C	5.3±0.25	K	2.3±0.25
D	4.5±0.5	L	0.5±0.1
E	6.3±0.25	M	0.508±0.015
F	2.3±0.05	N	1.5±0.25
G	0.6±0.05	O	1.0±0.25
H	0.7±0.5

TO-262


 

DIM	MILLIMETERS	DIM	MILLIMETERS
A	4.70±0.08	E1	7.85±0.08
A1	2.75±0.05	e	2.54±0.05
C	0.38±0.03	L	14.00±0.08
C2	1.27±0.03	L1	1.275±0.05
D	8.40±0.05	L2	3.75±0.08
D1	6.55±0.08	b	0.80±0.05
E	10.15±0.08	b2	1.22±0.05

   Note                                                                                   

 

1. Exceeding the maximun ratings of the device in performance may cause damage to the device  ,  even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device.
2. When installing the heatsink , please  pay  attention to the  torsional  moment  and the  smoothness of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity , it is necessary to protect the device from being damaged by the static electricity when using it.
4. This publication is made by Zhongxin Microelectronics and subject to regular change without notice.