Kbj/Gbj2005 to Kbj/Gbj210 Bridge Rectifier Diode

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: KBJ/GBJ2005-KBJ/GBJ210
• Certification: RoHS, CE, ISO, CCC, SGS
• Luminous Intensity: Standard
• Color: Black
• Structure: Planar
• Material: Silicon
• Transport Package: by Sea, Packaging
• Specification: GBJ6
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast recovery diode(SF) and schottky diode(SkY). The main package includes SOD-123FL, SMA, SMB, SMC, DO-41, DO-15, DO-17, DO-27, and R-6 etc.
What about the delivery ?
Usually the lead time is about 1-5 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time.
What about the payment terms ?
 30% Advance and 70% before shipment.
 What about the shipment terms ?
FOB Shanghai by sea;
We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to you to choose the freight forwarder and if you need, we could assist you.
Contact us:
Changzhou Zhongguang Electronic Co., Ltd
Add: No.6 Hehong Road,Wujin Economic Development Zone, Jiangsu, China.
Tel/Fax:[phone]   [phone]
 
Website: zg-diode.en.made-in-china.com

Parameter	Symbols	GBU 801	GBU 802	GBU 803	GBU 804	GBU 806	GBU 808	GBU 810	Unit
Maximum repetitive peak reverse voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	V
Maximum average forward rectified current	IF(AV)	8.0							A
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave	IFSM	150							A
Dielectric strength Terminals to case	Vdis	1500							V
t≤ 10 ms Current squared time t≤ 10 ms	I^2t	110							A^2S
Typical thermal resistance (Note 1,2)	RθJC	4.2							ºC/W
	RθJA	22
Operating junction temperature	TJ	150							ºC
Storage temperature range	TSTG	-55 --- +150							ºC