Diode 1n4007s 1n4002s a-405 600-800V 1000V General Purpose Rectifiers

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: 1N4001S-1N4007S
• Luminous Intensity: Standard
• Color: Gray,Black
• Structure: Planar
• Material: Silicon
• Transport Package: by Sea, Packaging
• Specification: A-405
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast recovery diode(SF) and schottky diode(SkY). The main package includes SOD-123FL, SMA, SMB, SMC, DO-41, DO-15, DO-17, DO-27, and R-6 etc.

 

Product Description

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Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.

	Symbols	1N4001S	1N4002S	1N4003S	1N4004S	1N4005S	1N4006S	1N4007S	Units
Maximum repetitive peak reverse voltage	VRMM	50	100	200	400	600	800	1000	Volts
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	Volts
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	Volts
Maximum Average Forward Rectified Current @TA=75 ºC	I(AV)	1.0							Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method)	IFSM	30.0							Amps
Maximum forward voltage at 1.0A	VF	1.1							Volts
Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC	IR	5.0 50.0							μA
Typical junction capacitance (Note 1)	CJ	15.0							pF
Typical thermal resistance (Note 2)	RθJA	26.0							ºC/W
Operating Temperature Range	TJ	-55 to +125							ºC
Storage Temperature Range	TSTG	-55 to +150							ºC