| Customization: | Available |
|---|---|
| Encapsulation Structure: | Plastic Sealed Transistor |
| Application: | Electronic Products |
|
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Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.
| Symbols | MB2M | MB4M | MB6M | MB8M | MB10M | Units | |
| Maximum repetitive peak reverse voltage |
VRMM | 200 | 400 | 600 | 800 | 1000 | Volts |
| Maximum RMS voltage | VRMS | 140 | 280 | 420 | 560 | 700 | Volts |
| Maximum DC blocking voltage | VDC | 200 | 400 | 600 | 800 | 1000 | Volts |
| Maximum average forward rectified current at TA=30ºC On glass-epoxy P.C.B. On aluminum substrate(Note 1,2) |
IF(AV) |
0.8 |
Amps |
||||
| Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
30.0 |
Amps |
||||
| Maximum forward voltage at 0.4A | VF | 1.1 | Volts | ||||
| Maximum DC reverse current TA=25ºC at rated DC blocking voltage TA=100ºC |
IR | 5.0 100 |
μA | ||||
| Typical junction capacitance per leg (Note 3) |
CJ | 15.0 | pF | ||||
| Typical thermal resistance per leg | RθJA | 75.0 | ºC/W | ||||
| Operating Temperature Range | TJ | -55 to +150 | ºC | ||||
| Storage Temperature Range | TSTG | -55 to +150 | ºC | ||||
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