Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter | Symbol | ES1M | Unit |
Peak Repetitive Reverse Voltage | VRRM | 1000 | V |
RMS Reverse Voltage | VRMS | 700 | V |
DC Blocking Voltage | VDC | 1000 | V |
Maximum Average Forward Output Current | IF_AV | 1.0 | A |
Peak Forward Surge Current, 8.3ms Single Half Sine wave |
IFSM | 30 | A |
Parameter | Symbol | ES1M | Unit |
Typical Thermal Resistance *1 |
RΘJA RΘJC RΘJL |
70 | °C/W |
25 | |||
30 | |||
Operating Junction Temperature Range | TJ | -55 ~ +150 | °C |
Storage Temperature Range | TSTG | -55 ~ +150 | °C |
Parameter | Symbol | Test Condition | Typ. | Max. | Unit | |
Maximum Instantaneous Forward Voltage | VF | IF = 1.0A | - | 2.5 | V | |
Maximum Reverse Current | IR |
Rated VR |
@ TA= 25°C | - | 10 | A |
@ TA = 125°C | - | 200 | ||||
Maximum Reverse Recovery Time | trr | IF = 0.5A, IRM = 1A, IR(REC) = 0.25A |
- | 35 | ns |