SABS120 1A 200V Glass Passivated Bridge Rectifier with ABS Package

• Customization: Available
• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Model NO.: SABS12-SABS120
• Certification: RoHS, CE, ISO, CCC
• Luminous Intensity: Standard
• Structure: Alloy
• Material: Silicon
• Raw Material: Copper
• Transport Package: by Sea, Packaging
• Specification: ABS
• Trademark: ZG Brand
• Origin: Auhui Province, China
• HS Code: 8541100000
• Production Capacity: 50000000000000000000000000

Product Description

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.
   

	SYMBOLS	SABS12	SABS13	SABS14	SABS15	SABS16	SABS18	SABS110		SABS115	SABS120	UNITS
Maximum repetitive peak reverse voltage	VRRM	20	30	40	50	60	80	100		150	200	V
Maximum RMS voltage	VRMS	14	21	28	35	42	56	70		105	140	V
Maximum DC blocking voltage	VDC	20	30	40	50	60	80	100		150	200	V
Maximum average forward rectified current at TL(see fig.1)	I(AV)	1.0										A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load	IFSM	30.0										A
Maximum instantaneous forward voltage at 1.0A	VF	0.55			0.70		0.85				0.95	V
Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C	IR	0.5							0.2			mA
		10.0					5.0		2.0
Typical junction capacitance (NOTE 1)	CJ	110			90							pF
Typical thermal resistance (NOTE 2)	RqJA	75.0										C/W
Operating junction temperature range	TJ,	-55 to +125					-55 to +150					C
Storage temperature range	TSTG	-55 to +150										C