Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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SYMBOLS | S2A | S2B | S2D | S2G | S2J | S2K | S2M | UNITS | ||
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | |
Maximum average forward rectified current at TL=90 C |
I(AV) | 2.0 | A | |||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load |
IFSM | 60.0 | A |
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Maximum instantaneous forward voltage at 2.0A | VF | 1.1 | V | |||||||
Maximum DC reverse current at rated DC blocking voltage | TA=25 C TA=100 C |
IR | 5.0 50.0 |
A | ||||||
Typical junction capacitance (NOTE 1) | J | 30.0 | pF | |||||||
Typical thermal resistance (NOTE 2) | RθJA | 50.0 | C/W | |||||||
Operating junction and storage temperature range | TJ,TSTG | -55 to +150 | C |