Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
1N5817 | 1N5818 | 1N5819 | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 20 | 30 | 40 | V |
Maximum RMS voltage | VRMS | 14 | 21 | 28 | V |
Maximum DC blocking voltage |
VDC | 20 | 30 | 40 | V |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | ||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
||
@IF=1.0A Maximum forward voltage |
VF | 0.45 | 0.55 | 0.60 | V |
@VDC TA= 25ºC Maximum reverse current |
IR | 30 | μA | ||
Typical thermal resistance (Note 1) | RθJA | 60 | ºC/W | ||
Operating junction |
Tj | -55 --- +125 | ºC | ||
Storage temperature rang |
TSTG | -55 --- +150 | ºC |