Customization: | Available |
---|---|
Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
UF 4001 |
UF 4002 |
UF 4003 |
UF 4004 |
UF 4005 |
UF 4006 |
UF 4007 |
Unit | ||||||
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | ||||||
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | ||||||
Maximum DC blocking voltage |
VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | ||||||
Maximum average forward rectified current |
IF(AV) | 1.0 | A | ||||||||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave |
IFSM |
30 |
A |
||||||||||||
@IF=1.0A Maximum forward voltage |
VF | 1.0 | 1.25 | 1.7 | V | ||||||||||
@VDC TA= 25ºC Maximum reverse current |
IR | 5.0 | μA | ||||||||||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 50 | 75 | ns | |||||||||||
Typical thermal resistance (Note 1) | RθJA | 65 | ºC/W | ||||||||||||
Operating junction and storage temperature range |
Tj, TSTG | -55 --- +150 | ºC |