Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Parameter |
Symbols |
K14 | K16 | K110 | K150 | K120 | Unit |
Maximum repetitive peak reverse voltage |
VRRM | 40 | 60 | 100 | 150 | 200 | V |
Maximum RMS voltage | VRMS | 28 | 42 | 70 | 105 | 140 | V |
Maximum DC blocking voltage |
VDC | 40 | 60 | 100 | 150 | 200 | V |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | ||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
||||
Typical thermal resistance (Note 1) | RθJA | 180 | ºC/W | ||||
Operating junction temperature range |
TJ | -55 --- +125 | -55 --- +150 | ºC | |||
Storage temperature range |
TSTG | -55 --- +150 | ºC | ||||
@IF=1.0A Maximum forward voltage |
VF | 0.50 | 0.70 | 0.85 | 0.92 | 0.95 | V |
@VDC TA = 25ºC Maximum reverse current |
IR | 30 | μA |