Customization: | Available |
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Encapsulation Structure: | Do-201ad / D0-27 |
Application: | Electronic Products |
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Symbols |
1N 5400 |
1N 5401 |
1N 5402 |
1N 5403 |
1N 5404 |
1N 5405 |
1N 5406 |
1N 5407 |
1N 5408 |
Units |
|
Maximum repetitive peak reverse voltage | VRMM | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | Volts |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 210 | 280 | 350 | 420 | 560 | 700 | Volts |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 | Volts |
Maximum Average Forward Rectified Current @TA=55 ºC | I(AV) | 3.0 | Amps | ||||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC |
IFSM |
200.0 |
Amps |
||||||||
Method) Maximum forward voltage at 3.0A DC |
VF | 1.0 | Volts | ||||||||
Maximum DC reverse current TJ=25ºC at rated DC blocking voltage TJ=100ºC | IR | 5.0 50 |
μA | ||||||||
Typical junction capacitance (Note 1) | CJ | 50.0 | 35.0 | pF | |||||||
Typical thermal resistance (Note 2) | RθJA | 15.0 | ºC/W | ||||||||
Operating Temperature Range | TJ | -55 to +150 | ºC | ||||||||
Storage Temperature Range | TSTG | -55 to +150 | ºC |