Customization: | Available |
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Encapsulation Structure: | Plastic Sealed Transistor |
Application: | Electronic Products |
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Symbols |
1S1 | 1S2 | 1S3 | 1S4 | 1S5 | 1S6 | 1S8 | Unit | ||
Parameter | ||||||||||
Maximum repetitive peak reverse voltage |
VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V | |
Maximum RMS voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | V | |
Maximum DC blocking voltage |
VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V | |
Maximum average forward rectified current |
IF(AV) | 1.0 | A | |||||||
8.3 ms Non-repetitive peak forward surge current 8.3 ms singlehalf sine-wave | IFSM |
30 |
A |
|||||||
Typical thermal resistance (Note 1) | RθJA | 65 | ºC/W | |||||||
Operating junction temperature range |
TJ | -55 --- +150 | ºC | |||||||
Storage temperature range |
TSTG | -55 --- +150 | ºC | |||||||
@IF=1.0A Maximum forward voltage |
VF | 0.95 | 1.25 | 1.70 | V | |||||
@VDC TA= 25ºC Maximum reverse current |
IR | 5 | μA | |||||||
IF=0.5A , IR=1.0A ,IRR=0.25A MAX. reverse recovery time | Trr | 35 | ns |