Zg Brand Bridge Rectifier Diode MB10f MB10m MB10s

• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Certification: RoHS, CE, ISO
• Luminous Intensity: Standard
• Color: Grey,Black
• Structure: Mbs,Mbm,DBS,dB,Wob,RS-2,Gbj2,Kbpc1,Kbp,Kbl,Gbj4
• Material: Silicon
• Transport Package: by Sea, Packaging in Cartons
• Specification: MBS,MBM,DBS,DB,WOB,RS-2,GBJ2,KBPC1,KBP,KBL,GBJ4
• Trademark: ZG Brand
• Origin: Anhui Province, China
• HS Code: 8541100000
• Production Capacity: 9000000000000

Product Description

Product Description

 

Detailed Photos

Certifications

Company Profile

 

Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.

	Symbols	MB2M	MB4M	MB6M	MB8M	MB10M	Units
Maximum repetitive peak reverse voltage	VRMM	200	400	600	800	1000	Volts
Maximum RMS voltage	VRMS	140	280	420	560	700	Volts
Maximum DC blocking voltage	VDC	200	400	600	800	1000	Volts
Maximum average forward rectified current at TA=30ºC On glass-epoxy P.C.B. On aluminum substrate(Note 1,2)	IF(AV)	0.8					Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method)	IFSM	30.0					Amps
Maximum forward voltage at 0.4A	VF	1.1					Volts
Maximum DC reverse current TA=25ºC at rated DC blocking voltage TA=100ºC	IR	5.0 100					μA
Typical junction capacitance per leg (Note 3)	CJ	15.0					pF
Typical thermal resistance per leg	RθJA	75.0					ºC/W
Operating Temperature Range	TJ	-55 to +150					ºC
Storage Temperature Range	TSTG	-55 to +150					ºC